•No write delays

• Unlimited write endurance

• Data retention greater than 20 years

• Automatic data protection on power loss

• Block write protection

• Fast, simple SPI interface with up to 40 MHz clock rate

• 2.7 to 3.6 Volt power supply range

• Low current sleep mode

•Industrial temperatures

• Available in 8-pin DFN or 8-pin DFN Small Flag RoHS-compliant packages

• Direct replacement for serial EEPROM, Flash, FeRAM

• AEC-Q100 Grade 1 Option

The MR25H10 is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR25H10 offers serial EEPROM and serial Flash compatible read/write timing with no write delays and unlimited read/write endurance.

Grade

Temperature Range

Package

Shipping Container

Order Part Number

Industrial

-40 to +85 C

8-DFN

Tray

MR25H10CDC

Tape and Reel

MR25H10CDCR

Small Flag 8-DFN

Tray

MR25H10CDF

Tape and Reel

MR25H10CDFR

AEC-Q100 Grade 1

-40 to +125 C

8-DFN

Tray

MR25H10MDC

Tape and Reel

MR25H10MDCR

Small Flag 8-DFN

Tray

MR25H10MDF

Tape and Reel

MR25H10MDFR

 深圳市英尚微电子中国区指定的授权代理

 JSC(EMLSI)、IPSILOG、BOYA、EVERSPIN、

NETSOL、ISOCOME、  PARAGON、SINOCHIP、UNIIC

著名半导体品牌的专业分销商  如：RAMTROM、ETRON、FUJITSU、LYONTEK、WILLSEMI

  韩国JSC(EMLSI),NETSOL和美国Everspin半导体中国区指定一级代理  

                    主要产品有：

                     1. Low power SRAM (低功耗静态随机存储器)1Mbit~8Mbit.

                     2. SPI SRAM(串行静态随机存储器)64Kbit~512Kbit.

                     3. PSRAM[Pseudo SRAM,UtRAM] (虚拟静态随机存储器)4Mbit~64Mbit.

                     4. Cellular RAM(伪静态随机存储器)4Mbit~64Mbit.

                     5.NvSRAM,F-RAM,MRAM(非易失性存储器)256Kbit~1Gbit

                     6. MCP 512Mbit+256Mbit,1Gbit+512Mbit,64Mbit+32Mbit,128Mbit+64Mbit,32Mbit+16Mbit

                     7. Mobile SDRAM/DDR(低功耗SDRAM/DDR)128Mbit~512Mbit