• 3.3 Volt VDD power supply with a range of 2.7V to 3.6V

• I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces

• Fast 45 ns read/write cycle

• SRAM compatible timing

• Unlimited read & write endurance

• Data always non-volatile for >20-years at temperature

• All products meet MSL-3 moisture sensitivity level

• RoHS-compliant small footprint BGA package

The MR256DL08B is a 262,144-bit magnetoresistive random access memory (MRAM) device organized as

32,768 words of 8 bits.  It supports I/O voltages from +1.65 to +3.6 volts. The MR256DL08B offers SRAM compatible 45ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR256DL08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.

The MR256DL08B is available in small footprint 8 mm x 8 mm, 48-pin ball grid array (BGA) package with

0.75 mm ball centers.

The MR256DL08B provides highly reliable data storage over a wide range of temperatures. The product is

offered with commercial temperature (0 to +70 °C).

Part Number

Description

Temperature

MR256DL08BMA45

Dual Supply 32kx8 MRAM 48-BGA

Commercial

MR256DL08BMA45R

Dual Supply 32kx8 MRAM 48-BGA Tape & Reel

Commercial

 深圳市英尚微电子中国区指定的授权代理

 JSC(EMLSI)、IPSILOG、BOYA、EVERSPIN、

NETSOL、ISOCOME、  PARAGON、SINOCHIP、UNIIC

著名半导体品牌的专业分销商  如：RAMTROM、ETRON、FUJITSU、LYONTEK、WILLSEMI

  韩国JSC(EMLSI),NETSOL和美国Everspin半导体中国区指定一级代理  

                    主要产品有：

                     1. Low power SRAM (低功耗静态随机存储器)1Mbit~8Mbit.

                     2. SPI SRAM(串行静态随机存储器)64Kbit~512Kbit.

                     3. PSRAM[Pseudo SRAM,UtRAM] (虚拟静态随机存储器)4Mbit~64Mbit.

                     4. Cellular RAM(伪静态随机存储器)4Mbit~64Mbit.

                     5.NvSRAM,F-RAM,MRAM(非易失性存储器)256Kbit~1Gbit

                     6. MCP 512Mbit+256Mbit,1Gbit+512Mbit,64Mbit+32Mbit,128Mbit+64Mbit,32Mbit+16Mbit

                     7. Mobile SDRAM/DDR(低功耗SDRAM/DDR)128Mbit~512Mbit