Pin- and function-compatible with CY7C1046B

High speed

tAA = 10 ns

CMOS for optimum speed and power

Low active power

ICC = 90 mA at 10 ns

Low CMOS standby power

ISB2 = 10 mA

Data retention at 2.0 V

Automatic power-down when deselected

TTL-compatible inputs and outputs

Easy memory expansion with CE and OE features

Available in lead-free 400-mil-wide 32-pin SOJ package

The CY7C1046D is a high-performance CMOS static RAM organized as 1M words by 4 bits. Easy memory expansion is

provided by an active LOW Chip Enable (CE), an active LOW

Output Enable (OE), and tri-state drivers. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable

Name

Density (Kb)

Frequency (MHz)

Max. Operating Voltage (V)

Min. Operating Voltage (V)

Organization (X x Y)

Package

Speed (ns)

CY7C1041BNL-15ZXC

4096

N/A

5.5

4.5

256K x 16

TSOP II

15

CY7C1041CV33-10BAXA

4096

N/A

3.6

3

256K x 16

FBGA

10

CY7C1041D-10VXI

4096

N/A

5.5

4.5

256K x 16

SOJ

10

CY7C1046D-10VXI

4096

N/A

5.5

4.5

1M x 4

SOJ

10

CY7C1049BNL-17VC

4096

N/A

5.5

4.5

512K x 8

SOJ

17

CY7C1049CV33-10VXA

4096

N/A

3.6

3

512K x 8

SOJ

10

CY7C1049D-10VXI

4096

N/A

5.5

4.5

512K x 8

SOJ

10

CY7C1049G30-10VXI

4096

N/A

3.6

2.2

512K x 8

SOJ

10

CY7C1049GN30-10VXI

4096

N/A

3.6

2.2

512K x 8

SOJ

10

CYPT1049DV33-12FZMB

4096

N/A

3.6

3

512K x 8

CERPAK

12

 深圳市英尚微电子中国区指定的授权代理

 JSC(EMLSI)、IPSILOG、BOYA、EVERSPIN、

NETSOL、ISOCOME、  PARAGON、SINOCHIP、UNIIC

著名半导体品牌的专业分销商  如：RAMTROM、ETRON、FUJITSU、LYONTEK、WILLSEMI

  韩国JSC(EMLSI),NETSOL和美国Everspin半导体中国区指定一级代理  

                    主要产品有：

                     1. Low power SRAM (低功耗静态随机存储器)1Mbit~8Mbit.

                     2. SPI SRAM(串行静态随机存储器)64Kbit~512Kbit.

                     3. PSRAM[Pseudo SRAM,UtRAM] (虚拟静态随机存储器)4Mbit~64Mbit.

                     4. Cellular RAM(伪静态随机存储器)4Mbit~64Mbit.

                     5.NvSRAM,F-RAM,MRAM(非易失性存储器)256Kbit~1Gbit

                     6. MCP 512Mbit+256Mbit,1Gbit+512Mbit,64Mbit+32Mbit,128Mbit+64Mbit,32Mbit+16Mbit

                     7. Mobile SDRAM/DDR(低功耗SDRAM/DDR)128Mbit~512Mbit