256-Kbit ferroelectric random access memory (F-RAM)

logically organized as 32 K × 8

High-endurance 100 trillion (1014) read/writes

151-year data retention (see the Data Retention and

Endurance table)

NoDelay™ writes

Advanced high-reliability ferroelectric process

SRAM and EEPROM compatible

Industry-standard 32 K × 8 SRAM and EEPROM pinout

70-ns access time, 130-ns cycle time

Superior to battery-backed SRAM modules

No battery concerns

Monolithic reliability

True surface mount solution, no rework steps

Superior for moisture, shock, and vibration

Resistant to negative voltage undershoots

Low power consumption

Active current 15 mA (max)

Standby current 25 A (typ)

Voltage operation: VDD = 4.5 V to 5.5 V

 深圳市英尚微电子中国区指定的授权代理

 JSC(EMLSI)、IPSILOG、BOYA、EVERSPIN、

NETSOL、ISOCOME、  PARAGON、SINOCHIP、UNIIC

著名半导体品牌的专业分销商  如：RAMTROM、ETRON、FUJITSU、LYONTEK、WILLSEMI

  韩国JSC(EMLSI),NETSOL和美国Everspin半导体中国区指定一级代理  

                    主要产品有：

                     1. Low power SRAM (低功耗静态随机存储器)1Mbit~8Mbit.

                     2. SPI SRAM(串行静态随机存储器)64Kbit~512Kbit.

                     3. PSRAM[Pseudo SRAM,UtRAM] (虚拟静态随机存储器)4Mbit~64Mbit.

                     4. Cellular RAM(伪静态随机存储器)4Mbit~64Mbit.

                     5.NvSRAM,F-RAM,MRAM(非易失性存储器)256Kbit~1Gbit

                     6. MCP 512Mbit+256Mbit,1Gbit+512Mbit,64Mbit+32Mbit,128Mbit+64Mbit,32Mbit+16Mbit

                     7. Mobile SDRAM/DDR(低功耗SDRAM/DDR)128Mbit~512Mbit