256-Kbit ferroelectric random access memory (F-RAM)

logically organized as 32K × 8

High-endurance 100 trillion (1014) read/writes

151-year data retention (See the Data Retention and

Endurance table)

NoDelay™ writes

Advanced high-reliability ferroelectric process

Fast two-wire serial interface (I2C)

Up to 3.4-MHz frequency[1]

Direct hardware replacement for serial EEPROM

Supports legacy timings for 100 kHz and 400 kHz

Device ID

Manufacturer ID and Product ID

Low power consumption

175-A active current at 100 kHz

150-A standby current

8-A sleep mode current

Low-voltage operation: VDD = 2.0 V to 3.6 V

Industrial temperature: –40 to +85

8-pin small outline integrated circuit (SOIC) package

Restriction of hazardous substances (RoHS) compliant

 深圳市英尚微电子中国区指定的授权代理

 JSC(EMLSI)、IPSILOG、BOYA、EVERSPIN、

NETSOL、ISOCOME、  PARAGON、SINOCHIP、UNIIC

著名半导体品牌的专业分销商  如：RAMTROM、ETRON、FUJITSU、LYONTEK、WILLSEMI

  韩国JSC(EMLSI),NETSOL和美国Everspin半导体中国区指定一级代理  

                    主要产品有：

                     1. Low power SRAM (低功耗静态随机存储器)1Mbit~8Mbit.

                     2. SPI SRAM(串行静态随机存储器)64Kbit~512Kbit.

                     3. PSRAM[Pseudo SRAM,UtRAM] (虚拟静态随机存储器)4Mbit~64Mbit.

                     4. Cellular RAM(伪静态随机存储器)4Mbit~64Mbit.

                     5.NvSRAM,F-RAM,MRAM(非易失性存储器)256Kbit~1Gbit

                     6. MCP 512Mbit+256Mbit,1Gbit+512Mbit,64Mbit+32Mbit,128Mbit+64Mbit,32Mbit+16Mbit

                     7. Mobile SDRAM/DDR(低功耗SDRAM/DDR)128Mbit~512Mbit