High speed

tAA = 10 ns

Ultra-low power PowerSnooze™ [1] device

Deep Sleep (DS) current IDS = 22-µA maximum

Low active and standby currents

ICC = 90-mA typical

ISB2 = 20-mA typical

Wide operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V

Embedded error-correcting code (ECC) for single-bit error correction

1.0-V data retention

Transistor-transistor logic (TTL) compatible inputs and outputs

Error indication (ERR) pin to indicate 1-bit error detection and correction

Available in Pb-free 48-pin TSOP I, 54-pin TSOP II, and 48-ball VFBGA packages

The CY7S1061G/CY7S1061GE is a high-performance CMOS fast static RAM organized as 1,048,576 words by 16 bits. This device features fast access times (10 ns) and a unique ultra-low power Deep Sleep mode. With Sleep mode currents as low as 22 µA, the CY7S1061G device combines the best features of fast and low-power SRAM in industry-standard package options.

The device also features embedded ECC[2]. ECC logic can

detect and correct single-bit error in the accessed location. The CY7S1061GE device includes an ERR pin that signals an error-detection and correction event during a read cycle.

To access devices with a single-chip enable input, assert the chip

Name

Density (Kb)

Frequency (MHz)

Max. Operating Voltage (V)

Min. Operating Voltage (V)

Organization (X x Y)

Package

Speed (ns)

CY7C10612DV33-10ZSXI

16384

N/A

3.6

3

1M x 16

TSOP II

10

CY7C1061AV33-10BAXI

16384

N/A

3.6

3

1M x 16

FBGA

10

CY7C1061DV18-15ZSXI

16384

N/A

2.2

1.65

1M x 16

TSOP II

15

CY7C1061DV33-10BV1XI

16384

N/A

3.6

3

1M x 16

VFBGA

10

CY7C1061GN18-15ZSXI

16384

N/A

2.2

1.65

1M x 16

TSOP II

15

CY7C1061GN30-10BVJXIT

16384

N/A

3.6

2.2

1M x 16

BGA

10

CY7C1062DV33-10BGI

16384

N/A

3.6

3

512K x 32

BGA

10

CY7C1069AV33-1XW14

16384

N/A

3.6

3

2M x 8

Wafer

CY7S1061G30-10ZXIES

16384

N/A

3.6

2.2

1M x 16

TSOP I

 深圳市英尚微电子中国区指定的授权代理

 JSC(EMLSI)、IPSILOG、BOYA、EVERSPIN、

NETSOL、ISOCOME、  PARAGON、SINOCHIP、UNIIC

著名半导体品牌的专业分销商  如：RAMTROM、ETRON、FUJITSU、LYONTEK、WILLSEMI

  韩国JSC(EMLSI),NETSOL和美国Everspin半导体中国区指定一级代理  

                    主要产品有：

                     1. Low power SRAM (低功耗静态随机存储器)1Mbit~8Mbit.

                     2. SPI SRAM(串行静态随机存储器)64Kbit~512Kbit.

                     3. PSRAM[Pseudo SRAM,UtRAM] (虚拟静态随机存储器)4Mbit~64Mbit.

                     4. Cellular RAM(伪静态随机存储器)4Mbit~64Mbit.

                     5.NvSRAM,F-RAM,MRAM(非易失性存储器)256Kbit~1Gbit

                     6. MCP 512Mbit+256Mbit,1Gbit+512Mbit,64Mbit+32Mbit,128Mbit+64Mbit,32Mbit+16Mbit

                     7. Mobile SDRAM/DDR(低功耗SDRAM/DDR)128Mbit~512Mbit