HIGH SPEED: (IS61/64WV6416DALL/DBLL)

High-speed access time: 8, 10, 12, 20 ns

Low Active Power: 135 mW (typical)

Low Standby Power: 12 µW (typical)

CMOS standby

LOW POWER: (IS61/64WV6416DALS/DBLS)

High-speed access time: 25, 35 ns

Low Active Power: 55 mW (typical)

Low Standby Power: 12 µW (typical)

CMOS standby

Single power supply

— Vdd 1.65V to 2.2V (IS61WV6416DAxx)

— Vdd 2.4V to 3.6V (IS61/64WV6416DBxx)

Fully static operation: no clock or refresh

required

Three state outputs

Data control for upper and lower bytes

Industrial and Automotive temperature support

Lead-free available

TheISSIIS61WV6416DAxx/DBxxandIS64WV6416DBxx

are high-speed, 1,048,576-bit static RAMs organized as

65,536 words by 16 bits. It is fabricated using ISSI's highperformanceCMOStechnology.Thishighlyreliableprocess

coupled with innovative circuit design techniques, yields

high-performance and low power consumption devices.