+3.3 Volt power supply

Fast 35 ns read/write cycle

SRAM compatible timing

Unlimited read & write endurance

Data always non-volatile for >20 years at temperature

RoHS-compliant small footprint BGA and TSOP2 package

The MR0A16A is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as

65,536 words of 16 bits. The MR0A16A offers SRAM compatible 35 ns read/write timing with unlimited en-

durance. Data is always non-volatile for greater than 20 years.  Data is automatically protected on power loss

by low-voltage inhibit circuitry to prevent writes with voltage out of specification.

 深圳市英尚微电子中国区指定的授权代理

 JSC(EMLSI)、IPSILOG、BOYA、EVERSPIN、

NETSOL、ISOCOME、  PARAGON、SINOCHIP、UNIIC

著名半导体品牌的专业分销商  如：RAMTROM、ETRON、FUJITSU、LYONTEK、WILLSEMI

  韩国JSC(EMLSI),NETSOL和美国Everspin半导体中国区指定一级代理  

                    主要产品有：

                     1. Low power SRAM (低功耗静态随机存储器)1Mbit~8Mbit.

                     2. SPI SRAM(串行静态随机存储器)64Kbit~512Kbit.

                     3. PSRAM[Pseudo SRAM,UtRAM] (虚拟静态随机存储器)4Mbit~64Mbit.

                     4. Cellular RAM(伪静态随机存储器)4Mbit~64Mbit.

                     5.NvSRAM,F-RAM,MRAM(非易失性存储器)256Kbit~1Gbit

                     6. MCP 512Mbit+256Mbit,1Gbit+512Mbit,64Mbit+32Mbit,128Mbit+64Mbit,32Mbit+16Mbit

                     7. Mobile SDRAM/DDR(低功耗SDRAM/DDR)128Mbit~512Mbit