Density

 1-Mbit (128K × 8)

 Bandwidth

 108-MHz high-speed interface

 Read and write at 54 MBps

 Serial Peripheral Interface

 Clock polarity and phase modes 0 and 3

 Multi I/O option – Single SPI (SPI), Dual SPI (DPI), and Quad

SPI (QPI)

 High reliability

 Infinite read, write, and RECALL cycles

 One million STORE cycles to nonvolatile elements (SONOS

FLASH Quantum trap)

 Data retention: 20 years at 85 °C

 Read

 Commands: Standard, Fast, Dual I/O, and Quad I/O

 Modes: Burst Wrap, Continuous (XIP)

 Write

 Commands: Standard, Fast, Dual I/O, and Quad I/O

 Modes: Burst Wrap

 Data protection

 Hardware: Through Write Protect Pin (WP)

 Software: Through Write Disable instruction

 Block Protection: Status Register bits to control protection

 Special instructions

 STORE/RECALL: Access data between SRAM and

Quantum Trap

 Serial Number: 8-byte customer selectable (OTP)

 Identification Number: 4-byte Manufacturer ID and Product

ID

 Store from SRAM to nonvolatile SONOS FLASH Quantum Trap

 AutoStore: Initiated automatically at power-down with a small

capacitor (VCAP)

 Software: Using SPI instruction (STORE)

 Hardware: HSB pin

 Recall from nonvolatile SONOS FLASH Quantum Trap to

SRAM

 Auto RECALL: Initiated automatically at power-up

 Software: Using SPI instruction (RECALL)

 Low-power modes

 Sleep: Average current = 280 µA at 85 °C

 Hibernate: Average current = 8 µA at 85 °C

 Operating supply voltages

 Core VCC: 2.7 V to 3.6 V

 I/O VCCQ: 1.71 V to 2.0 V

 Temperature range

 Extended Industrial: –40 °C to 105 °C

 Industrial: –40 °C to 85 °C

 Packages

 16-pin SOIC

 24-ball FBGA

The Cypress CY14V101QS combines a 1-Mbit nvSRAM with a

QPI interface. The QPI allows writing and reading the memory in

either a single (one I/O channel for one bit per clock cycle), dual

(two I/O channels for two bits per clock cycle), or quad (four I/O

channels for four bits per clock cycle) through the use of selected

opcodes.

The memory is organized as 128Kbytes each consisting of

SRAM and nonvolatile SONOS Quantum Trap cells. The SRAM

provides infinite read and write cycles, while the nonvolatile cells

provide highly reliable storage of data. Data transfers from

SRAM to the nonvolatile cells (STORE operation) take place

automatically at power-down. On power-up, data is restored to

the SRAM from the nonvolatile cells (RECALL operation). You

can also initiate the STORE and RECALL operations through

SPI instructions.

 深圳市英尚微电子中国区指定的授权代理

 JSC(EMLSI)、IPSILOG、BOYA、EVERSPIN、

NETSOL、ISOCOME、  PARAGON、SINOCHIP、UNIIC

著名半导体品牌的专业分销商  如：RAMTROM、ETRON、FUJITSU、LYONTEK、WILLSEMI

  韩国JSC(EMLSI),NETSOL和美国Everspin半导体中国区指定一级代理  

                    主要产品有：

                     1. Low power SRAM (低功耗静态随机存储器)1Mbit~8Mbit.

                     2. SPI SRAM(串行静态随机存储器)64Kbit~512Kbit.

                     3. PSRAM[Pseudo SRAM,UtRAM] (虚拟静态随机存储器)4Mbit~64Mbit.

                     4. Cellular RAM(伪静态随机存储器)4Mbit~64Mbit.

                     5.NvSRAM,F-RAM,MRAM(非易失性存储器)256Kbit~1Gbit

                     6. MCP 512Mbit+256Mbit,1Gbit+512Mbit,64Mbit+32Mbit,128Mbit+64Mbit,32Mbit+16Mbit

                     7. Mobile SDRAM/DDR(低功耗SDRAM/DDR)128Mbit~512Mbit