64-Kbit/256-Kbit ferroelectric random access memory (F-RAM)

 Logically organized as 8 K × 8 (FM31L276) / 32 K × 8

(FM31L278)

 High-endurance 100 trillion (1014) read/writes

 151-year data retention (See the Data Retention and

Endurance table)

 NoDelay™ writes

 Advanced high-reliability ferroelectric process

 High Integration Device Replaces Multiple Parts

 Serial nonvolatile memory

 Real time clock (RTC)

 Low voltage reset

 Watchdog timer

 Early power-fail warning/NMI

 Two 16-bit event counter

 Serial number with write-lock for security

 Real-time Clock/Calendar

 Backup current at 2 V: 1.15�1�7�1�7�1�7�1�7A at +25 �1�7�1�7�1�7�1�7C

 Seconds through centuries in BCD format

 Tracks leap years through 2099

 Uses standard 32.768 kHz crystal (6 pF/12.5 pF)

 Software calibration

 Supports battery or capacitor backup

 Processor Companion

 Active-low reset output for VDD and watchdog

 Programmable low-VDD reset trip point

 Manual reset filtered and debounced

 Programmable watchdog timer

 Dual Battery-backed event counter tracks system intrusions

or other events

 Comparator for power-fail interrupt

 64-bit programmable serial number with lock

 Fast 2-wire serial interface (I2C)

 Up to 1-MHz frequency

 Supports legacy timings for 100 kHz and 400 kHz

 RTC, Supervisor controlled via I2C interface

 Device select pins for up to 4 memory devices

 Low power consumption

 1.5 mA active current at 1 MHz

 120�1�7�1�7�1�7�1�7A standby current

 Operating voltage: VDD = 2.7 V to 3.6 V

 Industrial temperature: –40�1�7�1�7�1�7�1�7C to +85 �1�7�1�7�1�7�1�7C

 14-pin small outline integrated circuit (SOIC) package

Restriction of hazardous substances (RoHS) compliant

Underwriters laboratory (UL) recognized

The FM31L276/FM31L278 device integrates F-RAM memory

with the most commonly needed functions for processor-based

systems. Major features include nonvolatile memory, real time

clock, low-VDD reset, watchdog timer, nonvolatile event counter,

lockable 64-bit serial number area, and general purpose

comparator that can be used for a power-fail (NMI) interrupt or

any other purpose.

The FM31L276/FM31L278 is a 64-Kbit/256-Kbit nonvolatile

memory employing an advanced ferroelectric process. A

ferroelectric random access memory or F-RAM is nonvolatile

and performs reads and writes similar to a RAM. This memory is

truly nonvolatile rather than battery backed. It provides reliable

data retention for 151 years while eliminating the complexities,

overhead, and system-level reliability problems caused by other

nonvolatile memories. The FM31L276/FM31L278 is capable of

supporting 1014 read/write cycles, or 100 million times more write

cycles than EEPROM.

The real time clock (RTC) provides time and date information in

BCD format. It can be permanently powered from an external

backup voltage source, either a battery or a capacitor. The

timekeeper uses a common external 32.768 kHz crystal and

provides a calibration mode that allows software adjustment of

timekeeping accuracy.

The processor companion includes commonly needed CPU

support functions. Supervisory functions include a reset output

signal controlled by either a low VDD condition or a watchdog

timeout. RST goes active when VDD drops below a

programmable threshold and remains active for 100 ms after

VDD rises above the trip point. A programmable watchdog timer

runs from 100 ms to 3 seconds. The watchdog timer is optional,

but if enabled it will assert the reset signal for 100 ms if not

restarted by the host before the timeout. A flag-bit indicates the

source of the reset.

A comparator on PFI compares an external input pin to the

onboard 1.2 V reference. This is useful for generating a

power-fail interrupt (NMI) but can be used for any purpose. The

family also includes a programmable 64-bit serial number that

can be locked making it unalterable. Additionally it offers a dual

battery-backed event counter that tracks the number of rising or

falling edges detected on a dedicated input pin.

 深圳市英尚微电子中国区指定的授权代理

 JSC(EMLSI)、IPSILOG、BOYA、EVERSPIN、

NETSOL、ISOCOME、  PARAGON、SINOCHIP、UNIIC

著名半导体品牌的专业分销商  如：RAMTROM、ETRON、FUJITSU、LYONTEK、WILLSEMI

  韩国JSC(EMLSI),NETSOL和美国Everspin半导体中国区指定一级代理  

                    主要产品有：

                     1. Low power SRAM (低功耗静态随机存储器)1Mbit~8Mbit.

                     2. SPI SRAM(串行静态随机存储器)64Kbit~512Kbit.

                     3. PSRAM[Pseudo SRAM,UtRAM] (虚拟静态随机存储器)4Mbit~64Mbit.

                     4. Cellular RAM(伪静态随机存储器)4Mbit~64Mbit.

                     5.NvSRAM,F-RAM,MRAM(非易失性存储器)256Kbit~1Gbit

                     6. MCP 512Mbit+256Mbit,1Gbit+512Mbit,64Mbit+32Mbit,128Mbit+64Mbit,32Mbit+16Mbit

                     7. Mobile SDRAM/DDR(低功耗SDRAM/DDR)128Mbit~512Mbit