1-Mbit ferroelectric random access memory (F-RAM) logically

organized as 128 K × 8

 High-endurance 100 trillion (1014) read/writes

 151-year data retention (see the Data Retention and

Endurance table)

 NoDelay™ writes

 Page mode operation to 30 ns cycle time

 Advanced high-reliability ferroelectric process

 SRAM compatible

 Industry-standard 128 K × 8 SRAM pinout

 60-ns access time, 90-ns cycle time

 Superior to battery-backed SRAM modules

 No battery concerns

 Monolithic reliability

 True surface mount solution, no rework steps

 Superior for moisture, shock, and vibration

 Low power consumption

 Active current 7 mA (typ)

 Standby current 90A (typ)

 Low-voltage operation: VDD = 2.0 V to 3.6 V

 Industrial temperature: –40C to +85C

 32-pin thin small outline package (TSOP) Type I

 Restriction of hazardous substances (RoHS) compliant

The FM28V100 is a 128 K × 8 nonvolatile memory that reads and

writes similar to a standard SRAM. A ferroelectric random

access memory or F-RAM is nonvolatile, which means that data

is retained after power is removed. It provides data retention for

over 151 years while eliminating the reliability concerns,

functional disadvantages, and system design complexities of

battery-backed SRAM (BBSRAM). Fast write timing and high

write endurance make the F-RAM superior to other types of

memory.

The FM28V100 operation is similar to that of other RAM devices

and therefore, it can be used as a drop-in replacement for a

standard SRAM in a system. Read and write cycles may be

triggered by chip enable or simply by changing the address. The

F-RAM memory is nonvolatile due to its unique ferroelectric

memory process. These features make the FM28V100 ideal for

nonvolatile memory applications requiring frequent or rapid

writes.

The device is available in a 32-pin TSOP I surface mount

package. Device specifications are guaranteed over the

industrial temperature range –40 °C to +85 °C.

 深圳市英尚微电子中国区指定的授权代理

 JSC(EMLSI)、IPSILOG、BOYA、EVERSPIN、

NETSOL、ISOCOME、  PARAGON、SINOCHIP、UNIIC

著名半导体品牌的专业分销商  如：RAMTROM、ETRON、FUJITSU、LYONTEK、WILLSEMI

  韩国JSC(EMLSI),NETSOL和美国Everspin半导体中国区指定一级代理  

                    主要产品有：

                     1. Low power SRAM (低功耗静态随机存储器)1Mbit~8Mbit.

                     2. SPI SRAM(串行静态随机存储器)64Kbit~512Kbit.

                     3. PSRAM[Pseudo SRAM,UtRAM] (虚拟静态随机存储器)4Mbit~64Mbit.

                     4. Cellular RAM(伪静态随机存储器)4Mbit~64Mbit.

                     5.NvSRAM,F-RAM,MRAM(非易失性存储器)256Kbit~1Gbit

                     6. MCP 512Mbit+256Mbit,1Gbit+512Mbit,64Mbit+32Mbit,128Mbit+64Mbit,32Mbit+16Mbit

                     7. Mobile SDRAM/DDR(低功耗SDRAM/DDR)128Mbit~512Mbit