2-Mbit ferroelectric random access memory (F-RAM) logically

organized as 256 K × 8

 High-endurance 100 trillion (1014) read/writes

 151-year data retention (See the Data Retention and

Endurance table)

 NoDelay™ writes

 Advanced high-reliability ferroelectric process

 Very fast serial peripheral interface (SPI)

 Up to 40-MHz frequency

 Direct hardware replacement for serial flash and EEPROM

 Supports SPI mode 0 (0, 0) and mode 3 (1, 1)

 Sophisticated write protection scheme

 Hardware protection using the Write Protect (WP) pin

 Software protection using Write Disable instruction

 Software block protection for 1/4, 1/2, or entire array

 Device ID

 Manufacturer ID and Product ID

 Low power consumption

 300 μA active current at 1 MHz

 100 μA (typ) standby current

 3 μA sleep mode current

 Low-voltage operation: VDD = 2.0 V to 3.6 V

 Industrial temperature:–40°C to +85°C

 Packages

 8-pin small outline integrated circuit (SOIC) package

 8-pin dual flat no leads (DFN) package

 Restriction of hazardous substances (RoHS) compliant

The FM25V20A is a 2-Mbit nonvolatile memory employing an

advanced ferroelectric process. A ferroelectric random access

memory or F-RAM is nonvolatile and performs reads and writes

similar to a RAM. It provides reliable data retention for 151 years

while eliminating the complexities, overhead, and system-level

reliability problems caused by serial flash, EEPROM, and other

nonvolatile memories.

Unlike serial flash and EEPROM, the FM25V20A performs write

operations at bus speed. No write delays are incurred. Data is

written to the memory array immediately after each byte is

successfully transferred to the device. The next bus cycle can

commence without the need for data polling. In addition, the

product offers substantial write endurance compared with other

nonvolatile memories. The FM25V20A is capable of supporting

1014 read/write cycles, or 100 million times more write cycles

than EEPROM.

These capabilities make the FM25V20A ideal for nonvolatile

memory applications, requiring frequent or rapid writes.

Examples range from data collection, where the number of write

cycles may be critical, to demanding industrial controls where the

long write time of serial flash or EEPROM can cause data loss.

The FM25V20A provides substantial benefits to users of serial

EEPROM or flash as a hardware drop-in replacement. The

FM25V20A uses the high-speed SPI bus, which enhances the

high-speed write capability of F-RAM technology. The device

incorporates a read-only Device ID that allows the host to

determine the manufacturer, product density, and product

revision. The device specifications are guaranteed over an

industrial temperature range of –40 °C to +85 °C. 

 深圳市英尚微电子中国区指定的授权代理

 JSC(EMLSI)、IPSILOG、BOYA、EVERSPIN、

NETSOL、ISOCOME、  PARAGON、SINOCHIP、UNIIC

著名半导体品牌的专业分销商  如：RAMTROM、ETRON、FUJITSU、LYONTEK、WILLSEMI

  韩国JSC(EMLSI),NETSOL和美国Everspin半导体中国区指定一级代理  

                    主要产品有：

                     1. Low power SRAM (低功耗静态随机存储器)1Mbit~8Mbit.

                     2. SPI SRAM(串行静态随机存储器)64Kbit~512Kbit.

                     3. PSRAM[Pseudo SRAM,UtRAM] (虚拟静态随机存储器)4Mbit~64Mbit.

                     4. Cellular RAM(伪静态随机存储器)4Mbit~64Mbit.

                     5.NvSRAM,F-RAM,MRAM(非易失性存储器)256Kbit~1Gbit

                     6. MCP 512Mbit+256Mbit,1Gbit+512Mbit,64Mbit+32Mbit,128Mbit+64Mbit,32Mbit+16Mbit

                     7. Mobile SDRAM/DDR(低功耗SDRAM/DDR)128Mbit~512Mbit