512-Kbit ferroelectric random access memory (F-RAM)

logically organized as 64 K × 8

 High-endurance 100 trillion (1014) read/writes

 151-year data retention (See the Data Retention and

Endurance table)

 NoDelay™ writes

 Advanced high-reliability ferroelectric process

 Fast 2-wire Serial interface (I2C)

 Up to 3.4-MHz frequency

 Direct hardware replacement for serial (I2C) EEPROM

 Supports legacy timings for 100 kHz and 400 kHz

 Device ID

 Manufacturer ID and Product ID

 Low power consumption

 175�8�6A active current at 100 kHz

 90�8�6A (typ) standby current

 5�8�6A (typ) sleep mode current

 Low-voltage operation: VDD = 2.0 V to 3.6 V

 Industrial temperature: –40�8�3C to +85 �8�3C

 8-pin small outline integrated circuit (SOIC) package

 Restriction of hazardous substances (RoHS) compliant

The FM24V05 is a 512-Kbit nonvolatile memory employing an

advanced ferroelectric process. A ferroelectric random access

memory or F-RAM is nonvolatile and performs reads and writes

similar to a RAM. It provides reliable data retention for 151 years

while eliminating the complexities, overhead, and system-level

reliability problems caused by EEPROM and other nonvolatile

memories.

Unlike EEPROM, the FM24V05 performs write operations at bus

speed. No write delays are incurred. Data is written to the

memory array immediately after each byte is successfully

transferred to the device. The next bus cycle can commence

without the need for data polling. In addition, the product offers

substantial write endurance compared with other nonvolatile

memories. Also, F-RAM exhibits much lower power during writes

than EEPROM since write operations do not require an internally

elevated power supply voltage for write circuits. The FM24V05 is

capable of supporting 1014 read/write cycles, or 100 million times

more write cycles than EEPROM.

These capabilities make the FM24V05 ideal for nonvolatile

memory applications, requiring frequent or rapid writes.

Examples range from data logging, where the number of write

cycles may be critical, to demanding industrial controls where the

long write time of EEPROM can cause data loss. The

combination of features allows more frequent data writing with

less overhead for the system.

The FM24V05 provides substantial benefits to users of serial

(I2C) EEPROM as a hardware drop-in replacement. The device

incorporates a read-only Device ID that allows the host to

determine the manufacturer, product density, and product

revision. The device specifications are guaranteed over an

industrial temperature range of –40�8�3C to +85 �8�3C.

 深圳市英尚微电子中国区指定的授权代理

 JSC(EMLSI)、IPSILOG、BOYA、EVERSPIN、

NETSOL、ISOCOME、  PARAGON、SINOCHIP、UNIIC

著名半导体品牌的专业分销商  如：RAMTROM、ETRON、FUJITSU、LYONTEK、WILLSEMI

  韩国JSC(EMLSI),NETSOL和美国Everspin半导体中国区指定一级代理  

                    主要产品有：

                     1. Low power SRAM (低功耗静态随机存储器)1Mbit~8Mbit.

                     2. SPI SRAM(串行静态随机存储器)64Kbit~512Kbit.

                     3. PSRAM[Pseudo SRAM,UtRAM] (虚拟静态随机存储器)4Mbit~64Mbit.

                     4. Cellular RAM(伪静态随机存储器)4Mbit~64Mbit.

                     5.NvSRAM,F-RAM,MRAM(非易失性存储器)256Kbit~1Gbit

                     6. MCP 512Mbit+256Mbit,1Gbit+512Mbit,64Mbit+32Mbit,128Mbit+64Mbit,32Mbit+16Mbit

                     7. Mobile SDRAM/DDR(低功耗SDRAM/DDR)128Mbit~512Mbit