20V P-Channel Enhancement Mode MOSFET
The JXP2305AVRG uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
VDS =-20V,ID =-5.0A
RDS(ON)(Typ.)=39mΩ @VGS=-2.5V
RDS(ON)(Typ.)=29mΩ @VGS=-4.5V
High power and current handing capability
Lead free product is acquired
Surface mount package
APPLICATION
PWM applications
Load switch
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